Particles uplifted by this process become suspended in or on top of the liquid layer covering the wafer, and are removed when the rotation speed of the wafer is increased during the final drying process. Yiting Zhang (1), Mark J. Kushner (1), Saravanapriyan Sriraman (2), Alexei Marakhtanov (2), John Holland (2), and Alex Paterson (2) 1-Univ. Appl. Solid State Sci. We propose that the low wafer rotation speed and DIW flow rate impact the capillary number, allowing the DIW to percolate between the PSL particles and the oxide surface. Inventors: Maolin Long, Yuhou Wang, Ying Wu, Alex Paterson RF voltage sensor incorporating multiple voltage dividers for detecting RF voltages at a pickup device of a substrate support. 64 (2019). ALE has been studied in the laboratory for more than 25 years. Possible selectivity mechanisms will be discussed. Express 2 (2015) 046302, Work Function Tuning of Plasma-Enhanced Atomic Layer Deposited WCxNy Electrodes for Metal/Oxide/Semiconductor Devices A, Vol. Am. 3, Issue 11, P357-P362 (2014), Improvement in Surface Grinding Damage in Silicon Wafers by Chemical Spin Etching Technol. Alex Paterson Technical Director at Lam Research San Francisco Bay Area Semiconductors Together, these processes encompass a variety of implementations, all following the same ALE principles. A 66% flow rate reduction is achieved in comparison with the baseline process. Solid State Sci. In this paper, the authors present a computational investigation of customizing and controlling IEADs in a DF-CCP resembling those industrially employed with both biases applied to the substrate holding the wafer. Within the allowable thermal budget in the back-end-of-line process, rGO in a range of 1 nm thickness shows excellent thermal stability with suitable integration compatibility at 400 °C for 30 min. Temperature control in RF chamber with heater and air amplifier: Jon McChesney, Sacramento, CA (US); and Alex Paterson, San Jose, CA (US) Assigned to Lam Research Corporation, Fremont, CA (US) While minority carrier lifetime gradually increases with increased etching, this lifetime remains low after removing a 100-μm-thick strain layer. Keren J. Kanarik, Thorsten Lill, Eric A. Hudson, Saravanapriyan Sriraman, Samantha Tan, Jeffrey Marks, Vahid Vahedi, Richard A. Gottscho, Lam Research Corp. Yiting Zhang b), Saravanapriyan Sriraman c), and Alex Paterson d) Lam Research Corp., 4650 Cushing Parkway, Fremont, California 94538; Mark J. Kushner e) Department of Electrical Engineering and Computer Science, University of Michigan, … Alex Paterson’s role in Lam Research is Managing Director What is Alex Paterson’s email address? 69, Issue 8, 139-144 (2015), Using Deionized Water to Remove Polystyrene Latex Particles from Oxide Layer by Single-Wafer Spin Processing With these trends, continuously varying the phases between the dual-frequencies can smooth the high frequency modulation in the time averaged IEADs. There are 200+ professionals named "Alex Paterson", who use LinkedIn to exchange information, ideas, and opportunities. Completing the CAPTCHA proves you are a human and gives you temporary access to the web property. J. Vac. The minority carrier lifetime reaches that of defect-free silicon after removing a 300-μm-thick layer. Alex Paterson Current Assignee (The listed assignees may be inaccurate. Alex Paterson’s email address is a***@lamresearch.com What is Alex Paterson’s … The model is also used to develop a low flow process for the removal of titanium nitride. If you are at an office or shared network, you can ask the network administrator to run a scan across the network looking for misconfigured or infected devices. ECS J. Note: Paper QI3 3, Bull. Lam Research Corp Original Assignee Lam Research Corp Priority date (The priority date is an assumption and is not a legal conclusion. In 2007, he moved to LAM Research Corporation, where he is currently a Technical Director and manages a group of scientists responsible for concept and feasibility studies of enabling plasma technologies for the Conductor Etch Division. Abstract: We report on the diffusion barrier properties of chemical-vapor-deposition grown graphene, graphene oxide, and reduced graphene oxide (rGO) for copper metallization in integrated circuits. Lett. Learn more about Alex Paterson, Lam Research Corporation including contact information, career history, news and intelligence. This study reports on the improvement of the PRE to >98.0% by combining a DIW clean with a very low wafer rotation speed (10 rpm) and a very low DIW flow rate (200 ml/min). There are 200+ professionals named "Alex Paterson", who use LinkedIn to exchange information, ideas, and opportunities. After etching a 200-μm-thick layer, PAD measurements show that displacement at the surface recovers to 20 pm, which is the level of undamaged silicon. If you are on a personal connection, like at home, you can run an anti-virus scan on your device to make sure it is not infected with malware. Vol. Sci. Oren Zonensain (1), Sivan Fadida (1), Ilanit Fisher (2), Juwen Gao (2), Kaushik Chattopadhyay (2), Greg Harm (2), Tom Mountsier (2), Michal Danek (2), Moshe Eizenberg (1) 33, 020802 (2015), Highly Selective Directional Atomic Layer Etching of Silicon From materials research to plasma fundamentals, Lam’s technologists are contributing to practical and theoretical developments in their fields. Abstract: Understanding damage caused by mechanical grinding is required for wafer thinning processes, because such damage significantly affects device performance in large-scale integrated circuits. Alex Paterson (Lam Research Corp, San Jose, CA), 3pm, 8th October 2019, Court Senate Suite. Alex Paterson Research Associate Bioinformatician at University of Bristol Bristol. • 1-KAIST, 2-Lam Research Corp., 3-Korea Aerospace Univ. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Chad Huard (University of Michigan); Yiting Zhang, Saravanapriyan Sriraman, Alex Paterson (Lam Research Corp.); Mark Kushner (University of Michigan) Atomic layer etching (ALE) techniques are providing several benefits over conventional etching in maintaining critical dimensions, reducing damage and improving selectivity. of Michigan, 2-Lam Research Corp. Plasma is generated using two co-planar stove-top type coils with different radii, positioned above a … Lam Research Corp Original Assignee Lam Research Corp Priority date (The priority date is an assumption and is not a legal conclusion. Single-layer graphene shows the best diffusion barrier performance among the three but it has poor integration compatibility, displaying weak adhesion and poor nucleation for Cu deposition on top of it. 1-Univ. Phys. Additionally, we conclude that the CSE process is useful for thinning silicon wafers without inducing damage or strain. Tungsten carbo-nitrides (WC. However, the maximum PRE was below 50% (PSL, 500 nm spheres). Yiting Zhang (1), Mark J. Kushner (1), Saravanapriyan Sriraman (2), Alexei Marakhtanov (2), John Holland (2), and Alex Paterson (2) “Insights to Critical Dimension Control Through 3-Dimensional Profile Simulation for Plasma Etching” [PS2-WeM3] Yiting Zhang, M. Kushner (University of Michigan); S. Sriraman, A. Paterson (Lam Research) Wednesday, Nov. 12, 8:40 AM Abstract: Following Moore’s Law, feature dimensions will soon reach dimensions on an atomic scale. Chad M. Huard, Yiting Zhang, Saravanapriyan Sriraman, Alex Paterson, Mark J. Kushner JVST A 35, 05C301 (2017) | Read More Atomic layer etching in close-to-conventional plasma etch tools Please enable Cookies and reload the page. If the phases between the low frequency and its higher harmonics are changed, the sheath dynamics are modulated, which in turn produces modulation in the ion energy distribution. Yiting Zhang,b) Saravanapriyan Sriraman,c) Alex Paterson,d) and Keren J. Kanarike) Lam Research Corporation, 4650 Cushing Parkway, Fremont, California 94538 Mark J.Kushnerf) Department of Electrical Engineering and Computer Science, University of Michigan, … This result suggests that significant damage still exists in layers deeper than 10 μm. Samantha Tan, Wenbing Yang, Keren J. Kanarik, Thorsten Lill, Vahid Vahedi, Jeff Marks, Richard A. Gottscho, Lam Research Corp. The authors found that the ratio of the low-frequency to high-frequency power can be used to control the plasma density, provide extra control for the angular width and energy of the IEADs, and to optimize etch profiles. Technol. Alex Paterson. Jae Hoon Bong (1), Seong Jun Yoon (1), Alexander Yoon (2), Wan Sik Hwang (3), Byung Jin Cho (1) Herein, in-depth analysis of damage caused by mechanical grinding was conducted by measuring minority carrier lifetime and by the photoacoustic displacement (PAD) technique, which are highly sensitive and quantitative methods for measuring damage. Ken-ichi Sano, David Mui, Mark Kawaguchi, Lam Research Corp. The model is based on the dynamic balance between the wetting and dewetting velocities. These results clearly indicate that deep damage (i.e., depth of 200 μm) is caused at the silicon surface by conventional mechanical grinding. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. • Alex has 1 job listed on their profile. Abstract: Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. Saravanapriyan Sriraman,c) Alexei Marakhtanov,d) John Holland,e) and Alex Patersonf) Lam Research Corp., Fremont, California 94538 (Received 4 December 2014; accepted 3 March 2015; published 24 March 2015) Anisotropic etching, enabled by energetic ion bombardment, is one of the primary roles of To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A, Vol. The diffusion barrier property was verified through optical, physical, and chemical analyses. For planar devices, efforts in 2D etch profile simulations were sufficient to understand critical etch pro-cess mechanisms. Vol. Vol. The model predictions are found to agree reasonably well with experimental results. Rebecca Melanie Irons PhD Medical Anthropology London Area, United Kingdom. b) Author to whom correspondence should be addressed: [email protected] Note: This paper is part of the Special Collection: Papers from the 61st Annual Meeting of the APS Division of Plasma Physics. While the focus is on directional etching, isotropic ALE is also included. Supporting InformationArgonfor Computational Modelling of Atomic Layer Etching of Chlorinated Germanium Surfaces by Shenli Zhang,a+ Yihan Huang, a Gulcin Tetiker b, Saravanapriyan Sriramanb, Alex Patersonb and Roland Faller* c a. ECS J. 1-Technion—Israel Institute of Technology, 2-Lam Research Corp. View Alex Paterson’s profile on LinkedIn, the world’s largest professional community. Your IP: 103.27.236.13 Phys. ... Senior Technical Director at Lam Research San Jose, CA. and Alex Paterson. Vol. Kei Kinoshita, Philipp Engesser, Harald Okorn-Schmidt, Lam Research Corp. HAN, Univ of California - Los Angeles, ALEX PATERSON, Lam Research Corp — An industrial plasma etch tool installed at UCLA has been modified for accessibility and research purposes. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices. THE ATOMIC LAYER ETCHING OF HIGH ASPECT RATIO FEATURES* We previously attempted to improve the PSL removal rate with DIW by increasing the wafer rotation speed and the medium flow rate in single-wafer spin processing. Vishnuvardhanan Vijayakumar and Bhadri Varadarajan, Lam Research Corp. U.S. Appl. The atomic layer etching of chlorinated germanium surfaces under argon bombardment was simulated using molecular dynamics with a newly fitted Tersoff potential. ECS Trans. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. One way they help advance technology and expand scientific knowledge is by publishing in peer-reviewed journals, often in collaboration with academic researchers. Abstract: Anisotropic etching, enabled by energetic ion bombardment, is one of the primary roles of plasma–assisted materials processing for microelectronics fabrication. Technol. In this paper, we study selective, directional ALE of silicon using plasma assisted chlorine adsorption, specifically selectivities to bulk silicon oxide as well as thin gate oxide. Solid State Sci. Leakage Current Mechanisms and Their Dependence on Composition in Silicon Carbonitride Thin Films For the most advanced structures, conventional plasma etch processes are unable to meet the requirement of atomic scale fidelity. Assignee: Lam Research Corporation Inventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon ... Tom A. Kamp, Yoshie Kimura, Duming Zhang, Chen Xu, John Drewery, Alex Paterson Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control … See below for some of our recent publications from the technical literature. However, although a 10-μm-thick surface layer is removed by chemical spin etching (CSE), the minority carrier lifetime remains low. View the profiles of professionals named "Alex Paterson" on LinkedIn. Abstract: A model is proposed to describe the wetting and dewetting dynamics on a spinning wafer with a non-wetting surface. The breakthrough that is needed can be found in atomic layer etching or ALE, where greater control can be achieved by separating out the reaction steps. Sci. Alex Paterson, LAM Research, USA 15:20 – 15:40 Plasma deposition of ‘fluffy’ carbon aggregates as analogues for dust in space Ionut Topala, IPARC, Romania 15:40 – 16:00 Turbulence‐induced entrainment in plasma jets Mohammad Hasan, University of Liverpool, UK Also published under: A. Paterson, A. M. Paterson. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. IN . Alex Paterson Current Assignee (The listed assignees may be inaccurate. Rebecca Melanie Irons. 106, 063112 (2015), Overview of Atomic Layer Etching in the Semiconductor Industry Lett. J. Vac. Kei Kinoshita, Lam Research Corp. ulation SARAVANAPRIYAN SRIRAMAN, ALEX PATERSON, Lam Research, YITING ZHANG, MARK KUSHNER, University of Michigan — Plasma etching is critical for pattern transfer in microelectronics fabrication. Technol. 106, 082107 (2015), Ultrathin Graphene and Graphene Oxide Layers as a Diffusion Barrier for Advanced Cu Metallization Naval Research Laboratory, USA 16:15-16:30: O50: Investigating the role of neutral transport in ALE and RIE processes using a 3-dimensional Monte Carlo Feature Profile Model Chad M. Huard* 1, Mark J. Kushner 1, Yiting Zhang 2, Saravanapriyan Sriraman 2, Alex Paterson 2 1 University of Michigan, USA, 2 Lam Research Corp., USA 16:30-16:45: O51 Films deposited with a lower carbon/nitrogen ratio showed two modes of electrical conduction; namely, Schottky emission mode below 2.3 MV cm, Abstract: One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. The chlorination energy determines the threshold energy for etching and the number of etched atoms … 33, 031302 (2015), Dewetting Model Study on a Spinning Substrate – Challenges for Low Chemical Consumption Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) This paper reports a deionized water (DIW)-based approach that significantly improves the particle removal efficiency (PRE) of polystyrene latex (PSL) particles from oxide surfaces. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Lam Research Alex Paterson Research Associate Bioinformatician at University of Bristol Bristol. Technol. Previous low-sensitivity damage measurements indicate that grinding damage is distributed within a 5-μm-thick surface layer. 1 University of California, Los Angeles, California 90024, USA; 2 Lam Research Corp, Fremont, California 90024, USA; a) Invited speaker. The spatial distribution of the PRE matches that of the calculated capillary numbers across the wafer. Technol. Alex Paterson. Alex Paterson : Lam Research, Inc. Matthew Geockner : University of Texas at Dallas David Schultz Oak Ridge National Laboratory : Steven Girshick University of Minnesota : Mark Sobolewski : National Institute for Standards and Technology Valery Godyak : Consultant Tim Sommerer General Electric, Inc. William Graham Queens University of Belfast Phys. The proposed model predicts a theoretical lower limit for the media flow rate to completely wet a wafer surface as a function of the contact angle and wafer rotational speed. of Michigan, 2-Lam Research Corp. J. Vac. 4, Issue 6, N5010-N5012 (2015), Control of Ion Energy and Angular Distributions in Dual-Frequency Capacitively Coupled Plasmas Through Power Ratios and Phase: Consequences on Etch Profiles Soc. For validation, results from the simulation are compared with Langmuir probe measurements of ion saturation current densities in a DF-CCP. INVESTIGATING THE ROLE . Directory of Profiled Business People: Alex Paterson Patel, Avina - Patil, D > Paternò, Rosalia - Paterson, Barrie > Paterson, Alessandra - Paterson, Alexander > Paterson, Alex 1-25 of 63 Contacts One challenge in plasma etching is being able to control the ion energy-angular distributions (IEADs) from the presheath to the surface of the wafer which is necessary for maintaining the critical dimension of features. Alberto Mellone ... Brian Lam PhD Candidate at UCL London. PROCESS NON-IDEALITY . Mater. Abstract: Residual particles significantly degrade the performance of large-scale integrated circuits; hence, the methods and efficiencies of particle-removal technologies for semiconductor wafer-cleaning processes are continuously being improved. The use of an extremely thin rGO layer as a Cu barrier material is expected to provide an alternative route for further scaling of copper interconnect technology. PSL particles are generally very difficult to remove from silicon oxide surfaces using DIW alone. 3, Issue 4, Q61-Q64 (2014), Abstract: Electrical conduction in amorphous silicon carbonitride (a-SiCN:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) is investigated for varying carbon to nitrogen ratios at room temperature. Dual frequency capacitive coupled plasmas (DF-CCPs) potentially provide flexible control of IEADs, providing high selectivity while etching different materials and improved uniformity across the wafer. Cloudflare Ray ID: 63180b68cc8ac6e8 Performance & security by Cloudflare, Please complete the security check to access. Res. Yiting Zhang,b) Saravanapriyan Sriraman,c) and Alex Patersond) Lam Research Corp., 4650 Cushing Parkway, Fremont, California 94538 Mark J.Kushnere) Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122 Sci. Lam Research Corp., Fremont, CA 94538 USA * Work supported by Lam Research Corp., DOE Office of Fusion Energy Science and National Science Foundation. ECS J.
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